Richardson Electronics' Featured Technologies

Gallium Nitride (GaN) technology has rapidly expanded across commercial and defense sectors, thanks to its high power density and efficiency. From a handful of transistors in the 1990s, the GaN market has surged, with Power GaN and RF GaN are each expected to hit $2 billion by 2030.

Silicon Carbide (SiC) transistors, Schottky diodes, and power modules deliver higher efficiency, greater power density, and reduced size and weight. They also support higher temperatures and switching frequencies. SiC is increasingly used in power supplies, solar inverters, and battery-powered EVs.

Silicon Germanium (SiGe) combines reliability, speed, and low cost, driving growth in wireless networks by cutting size and power demands for WiFi, GPS, and cellular devices. These benefits also extend to radar and AESA communication systems.

GaAs devices are fast, flexible and low-noise, and they are commonly used in weak-signal amplification applications, including ultra-high RF, fast electronic switching, LEDs and solar.

Complementary Metal Oxide Semiconductor is a technology for constructing integrated circuits.