Richardson Electronics' Featured Technologies

Gallium Nitride (GaN)

Gallium Nitride technology is quickly gaining traction in a growing range of commercial and defense applications, in large part due to the high power density and high efficiency it can offer. Beginning with just a few GaN transistors in the 1990s, the GaN market has grown exponentially, with projections pushing RF GaN device revenue to nearly $560 million in 2019.

Silicon Carbide (SiC)

Silicon Carbide transistors, Schottky diodes and power modules offer improved efficiency and reduced system size and weight, as well as higher operating temperature, switching frequency and power density. The rapidly expanding range of SiC applications include power supplies, solar inverters, and battery-powered electric vehicles with wireless chargers such as plug-in hybrid vehicles (PHEVs).

Silicon Germanium (SiGe)

Silicon Germanium’s reliability, speed and low cost enabled rapid growth in wireless networks, reducing the size and power needs of WiFi, GPS, cellular phones, and more. Today’s SiGe highly-integrated core chip solutions offer the same advantages to radar and Communication Active Electronically Steerable Antenna (AESA) applications.

Gallium Arsenide (GaAs)

GaAs devices are fast, flexible and low-noise, and they are commonly used in weak-signal amplification applications, including ultra-high RF, fast electronic switching, LEDs and solar.

Complementary Metal Oxide Semiconductor (CMOS)

Complementary Metal Oxide Semiconductor is a technology for constructing integrated circuits.

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