UnitedSiC Generation 3 SiC FETs
The 3rd generation 650V and 1200V SiC FETs from UnitedSiC deliver excellent switching speed, fast body diode, high temperature operation, low RDS(ON) and ruggedness that make them outstanding solutions for all switching circuit topologies. These devices are ‘drop-in’ replacements for IGBT, Si-MOSFET, Super Junction MOSFET and SiC-MOSFET parts, and do not require changes to gate drive circuitry. Unique to these high performance packages are the 4-Lead Kelvin package which provides designers with very fast switching, high-power semiconductors in a package capable of high-power dissipation.
UnitedSiC FETs are:
- Co-packaged high-performance Gen3 SiC JFETs with cascode optimized MOSFET
- Only standard gate drive SiC device in the market today
Why the UJ3C & UF3C Series?
Key Features
- Excellent body diode performance (Vf < 2V)
- Drive with any Si and/or SiC gate drive voltage
- High performance cascode configuration
- Superior thermal performance
- Integrated ESD and gate protection
- Kelvin package (UF3C Fast series)
- Drop-in Functionality without Changing Gate Drive Voltage
(Replaces Si IGBTs, Si FETs, Super junction FETs and SiC MOSFETs
End Applications
- Electric Vehicles
- Battery Chargers
- Telecom & Server PSU
- Solar inverters
- Energy storage
- Motor drives
For More Information on UnitedSiC
UnitedSiC’s Vice President of Engineering Anup Bhalla Discusses New Devices
Available Package Types
DFN 8×8 
UF3SC065030D8S
UF3SC065040D8S
TO220-2L
Diodes
UJ3D06504TS
UJ3D06506TS
UJ3D06508TS
UJ3D06510TS
UJ3D06512TS
UJ3D06516TS
UJ3D06520TS
UJ3D06530TS
UJ3D1202TS
UJ3D1205TS
UJ3D1210TS
TO-220-3L
FETs
UJ3C065080T3S
UJ3C065030T3S
UF3C065040T3S
TO-247-2L 
Diodes
UJ3D1210K2
UJ3D1220K2
UJ3D1250K2
UJ3D1725K2
