Your Go-To for IGBT and Diode Devices
Fuji Electric has been developing IGBT (insulated-gate bipolar transistor) modules designed to be used as a switching element. The IGBT module is a key device for achieving energy savings and stable power supply in industrial equipment such as motor drive inverters, uninterruptible power supplies (UPS), and power conditioners for wind and photovoltaic power generation equipment. In recent years, there has been a strong demand for energy savings, miniaturization, space savings, and increased reliability in industrial equipment and devices. In order to meet this demand, Fuji developed the 7th Generation “X Series” IGBT Module.
- IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Features of the IGBT Module X Series
Reduces power dissipation to contribute to energy saving
The IGBT and diode devices of Fuji electric’s 7th-generation X series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. This has successfully reduced power dissipation in inverter operation compared with conventional products (Fuji Electric’s 6th generation V Series), contributing to energy saving and power cost reduction of the equipment on which the module is installed.
Achieves equipment size reduction
A newly developed insulating substrate has been applied in order to improve the module’s heat dissipation. Combined with the feature described above (reduced power dissipation) to suppress heat generation, an approximately 36%*1 reduction has been achieved in comparison to the conventional module. In addition, the maximum temperature guaranteed in continuous operation has been increased from the conventional 150°C to 175°C, which allows the output current to be increased by up to 35%*2 while maintaining the size of the equipment on which the module is installed. This contributes to reducing the size and total cost of the equipment.
- *1: Mounting area ratio with 1200 V 75A PIM models
- *2: Value estimated from simulation results
Contributes to improving equipment reliability
Newly developed structures and materials of the module have realized to increase its stability and durability in high-temperature operation giving it the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor. This contributes to improving the stability and reliability of the equipment on which the module is installed.
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7th Generation IGBT Products