UnitedSiC Generation 4 SiC FETs
Based on a unique cascode configuration, the 750V and 1200V Generation 4 SiC FET series delivers industry-best performance figures of merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost effectiveness. Switching performance and Qrr are improved as are Eon and Eoff losses at every given RDS(on). In addition, reduced levels in Eoss and Coss deliver lowest total losses. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp. The 1200V UF4C/SC series are the ideal power solution for mainstream 800V bus architectures.
Key Features:
- 750V and 1200V options
- Low RDS(on)
- From 6mΩ to 60mΩ for 750V
- From 23mΩ to 70mΩ for 1200V
- Key Figures of Merit enable next gen, high-performance power designs
- Best-in-class RDS(on) x Area
- Improve the Qrr and Eon/Eoff losses at a given RDS(on)
- Reduce both Coss(er)/Eoss and Coss(tr)
- 5µs short-circuit withstand time for 750V @ 6mΩ
- 5V VTH, +/-20V Vgs(max), ESD protected
- Standard (0-12V) or SiC FET gate drives (Bipolar)
- Excellent reverse recovery
- Low body diode
- Low gate charge
- TO-247-3L, TO-247-4L, and D2PAK-7L industry-standard packages
- Most devices are AEC-Q101 qualified
Key Applications:
- Automotive: Traction inverters; On-board chargers; DC/DC converters
- Battery charging: Fast DC charging, wireless charging, industrial chargers
- IT infrastructure: PFC; DC/DC converters
- Renewables: Solar inverters; Energy storage
- Circuit protection: AC/DC circuit breakers, medium voltage circuit breakers solid-state power controllers
