UnitedSiC 4th Generation SiC FETs

Based on a unique cascode configuration, the UJ4C Generation 4 SiC FET series is rated at 750V while delivering industry-best performance figures of merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost effectiveness. Switching performance and Qrr are improved as are Eon and Eoff losses at every given RDS(on). In addition, reduced levels in Eoss and Coss deliver lowest total losses. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp. All devices are AEC-Q101 qualified.

Key Features:

  • 750V
  • Low RDS(on) from 18mohm to 60mohm
  • Key Figures of Merit enable next gen, high-performance power designs
    • Best-in-class RDS(on) x Area
    • Improve the Qrr and Eon/Eoff losses at a given RDS(on)
    • Reduce both Coss(er)/Eoss and Coss(tr)
  • 5V VTH, +/-20V Vgs(max), ESD protected
  • Standard (0-12V) or SiC FET gate drives (Bipolar)
  • Excellent reverse recovery
  • Low body diode
  • Low gate charge
  • TO247-3L & -4L industry-standard packages
  • AEC-Q101 qualified

Key Applications:

  • Automotive: On-board chargers; DC-DC converters
  • IT infrastructure: PFC; DC-DC converters
  • Renewables: Solar inverters; Energy storage

New Generation 4 SiC FET Product Overview (UJ4C Series)


Available Package Types